On the InGaP/In(x)Ga(1-x)As Pseudomorphic High Electron-Mobility Transistor s with High-Temperature Reliabilities

We reported the high-temperature reliability characteristics of a novel InGaP/InxGa1-xAs pseudomorphic transistor with an inverted delta-doped channel in this work. Due to the presented wide-gap InGaP Schottky layer and the “V-shaped” InxGa1xAs channel structure, the degradation of device performance with increasing the temperature is not so significant. Experimentally, for a 1×100 μm device, the gate-drain voltages at a gate leakage current of 260 μA/mm and the maximum transconductances gm,max are 30 (22.2) V and 201 (169) mS/mm at the temperature of 300 K (450 K), respectively. Meanwhile, the broad and flat drain current operation regimes for high gm, fT, and fmax are obtained.