H. Leipner, C. Hubner, O. Storbeck, A. Polity, R. Krause-Rehberg
{"title":"塑性变形砷化镓的缺陷表征","authors":"H. Leipner, C. Hubner, O. Storbeck, A. Polity, R. Krause-Rehberg","doi":"10.1109/SIM.1996.571100","DOIUrl":null,"url":null,"abstract":"The defect spectrum in plastically deformed GaAs is analyzed by positron lifetime measurements. Different types of defects, such as vacancy clusters or antisites, are identified and their thermal annealing behavior is studied.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Defect characterization in plastically deformed gallium arsenide\",\"authors\":\"H. Leipner, C. Hubner, O. Storbeck, A. Polity, R. Krause-Rehberg\",\"doi\":\"10.1109/SIM.1996.571100\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The defect spectrum in plastically deformed GaAs is analyzed by positron lifetime measurements. Different types of defects, such as vacancy clusters or antisites, are identified and their thermal annealing behavior is studied.\",\"PeriodicalId\":391894,\"journal\":{\"name\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-12-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1996.571100\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.571100","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Defect characterization in plastically deformed gallium arsenide
The defect spectrum in plastically deformed GaAs is analyzed by positron lifetime measurements. Different types of defects, such as vacancy clusters or antisites, are identified and their thermal annealing behavior is studied.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
