{"title":"Al/p-Si(100)和Ti/p-Si(100)肖特基势垒二极管电流-电压的温度依赖性","authors":"Arely Vazquez, J. Molina","doi":"10.1109/LAEDC54796.2022.9908217","DOIUrl":null,"url":null,"abstract":"The current-voltage (I-V) characteristics on Al/p-Si (100) and Ti/p-Si (100) Schottky barrier diodes (SD) in the temperature range of 25–85°C were carried out. The Schottky barrier height (SBH) and ideality factor n calculated for both metal-semiconductor (MS) structures by using thermionic emission theory showed a strong dependence on temperature. The metals employed (titanium and aluminum) during the fabrication process were characterized to obtain electrical and physical parameters.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"289 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Temperature dependence of current-voltage of Al/p-Si(100) and Ti/p-Si(100) Schottky barrier diodes\",\"authors\":\"Arely Vazquez, J. Molina\",\"doi\":\"10.1109/LAEDC54796.2022.9908217\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The current-voltage (I-V) characteristics on Al/p-Si (100) and Ti/p-Si (100) Schottky barrier diodes (SD) in the temperature range of 25–85°C were carried out. The Schottky barrier height (SBH) and ideality factor n calculated for both metal-semiconductor (MS) structures by using thermionic emission theory showed a strong dependence on temperature. The metals employed (titanium and aluminum) during the fabrication process were characterized to obtain electrical and physical parameters.\",\"PeriodicalId\":276855,\"journal\":{\"name\":\"2022 IEEE Latin American Electron Devices Conference (LAEDC)\",\"volume\":\"289 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Latin American Electron Devices Conference (LAEDC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LAEDC54796.2022.9908217\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LAEDC54796.2022.9908217","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Temperature dependence of current-voltage of Al/p-Si(100) and Ti/p-Si(100) Schottky barrier diodes
The current-voltage (I-V) characteristics on Al/p-Si (100) and Ti/p-Si (100) Schottky barrier diodes (SD) in the temperature range of 25–85°C were carried out. The Schottky barrier height (SBH) and ideality factor n calculated for both metal-semiconductor (MS) structures by using thermionic emission theory showed a strong dependence on temperature. The metals employed (titanium and aluminum) during the fabrication process were characterized to obtain electrical and physical parameters.
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