M. Vidojkovic, M. Sanduleanu, J. van der Tang, P. Baltus, A. V. van Roermund
{"title":"一个1.2 V，无电感，90纳米CMOS LP的宽带LNA","authors":"M. Vidojkovic, M. Sanduleanu, J. van der Tang, P. Baltus, A. V. van Roermund","doi":"10.1109/RFIC.2007.380831","DOIUrl":null,"url":null,"abstract":"This paper presents a novel broadband, inductorless, resistive-feedback CMOS LNA. The LNA is designed for the frequency band 0.4 - 1 GHz. The measured power gain of the LNA is 16 dB at 1 GHz and the 3-dB bandwidth is 2 GHz. A noise figure of 3.5 dB and an IIP3 of -17 dBm are measured at 900 MHz. The S11 is better than -10 dB in the frequency band from 300 MHz up to 1 GHz. The current consumption is 14 mA from a 1.2 V supply. The circuit is designed in a baseline CMOS 90 nm low power (LP) process.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"34","resultStr":"{\"title\":\"A 1.2 V, Inductorless, Broadband LNA in 90 nm CMOS LP\",\"authors\":\"M. Vidojkovic, M. Sanduleanu, J. van der Tang, P. Baltus, A. V. van Roermund\",\"doi\":\"10.1109/RFIC.2007.380831\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a novel broadband, inductorless, resistive-feedback CMOS LNA. The LNA is designed for the frequency band 0.4 - 1 GHz. The measured power gain of the LNA is 16 dB at 1 GHz and the 3-dB bandwidth is 2 GHz. A noise figure of 3.5 dB and an IIP3 of -17 dBm are measured at 900 MHz. The S11 is better than -10 dB in the frequency band from 300 MHz up to 1 GHz. The current consumption is 14 mA from a 1.2 V supply. The circuit is designed in a baseline CMOS 90 nm low power (LP) process.\",\"PeriodicalId\":356468,\"journal\":{\"name\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"34\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2007.380831\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2007.380831","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1.2 V, Inductorless, Broadband LNA in 90 nm CMOS LP
This paper presents a novel broadband, inductorless, resistive-feedback CMOS LNA. The LNA is designed for the frequency band 0.4 - 1 GHz. The measured power gain of the LNA is 16 dB at 1 GHz and the 3-dB bandwidth is 2 GHz. A noise figure of 3.5 dB and an IIP3 of -17 dBm are measured at 900 MHz. The S11 is better than -10 dB in the frequency band from 300 MHz up to 1 GHz. The current consumption is 14 mA from a 1.2 V supply. The circuit is designed in a baseline CMOS 90 nm low power (LP) process.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
