一种平面化高压硅沟槽侧壁氧化合并PIN/肖特基(TSOX-MPS)整流器

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764077

R.N. Gupta, W. Min, T. Chow, H. Chang, C. Winterhalter

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引用次数: 3

摘要

描述了一种新的沟槽结整流器，它使用侧壁氧化物间隔器将主PIN区与相邻的肖特基区分开。肖特基区有助于在关断期间从漂移区去除少数载流子，并促进导通状态下的正导通。仿真和实验测量表明，与传统的P/sup +/IN整流器相比，反向峰值电流和反向恢复电荷显著提高，正向压降更低。

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A planarized high-voltage silicon trench sidewall oxide-merged PIN/Schottky (TSOX-MPS) rectifier

A new trench junction rectifier, which uses sidewall oxide spacers to separate the main PIN region from the adjacent Schottky regions, is described. The Schottky regions help remove minority carriers from the drift region during turn off and facilitate forward conduction in the on-state. Simulations and experimental measurements have shown that the peak reverse current and reverse recovery charge are significantly improved along with a lower forward voltage drop when compared to the conventional P/sup +/IN rectifier.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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