多芯片模块同步开关噪声的实验表征

Kenji Ito, Katsuto Kato, N. Hirano, Toshio Sudo
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引用次数: 12

摘要

为了实现高性能、高速的系统,基于cmos的多芯片模块得到了积极的发展。CMOS输出缓冲器引起的同步开关噪声(SSN)在多芯片模块和单芯片封装中都是一个严重的问题,以确保稳定的运行和获得固有的速度性能。通过去除第一级封装及其寄生物,多芯片模块有望具有比单芯片封装更小的开关噪声水平。本文报道了一种开关噪声产生芯片对不同类型mcm开关噪声的测量结果。制作了两种测试车,并对测试结果进行了比较。测量了地平面上的噪声分布。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Experimental characterization of simultaneous switching noise for multichip module
CMOS-based multichip modules have been actively developed for achieving high performance and high speed systems. Simultaneous switching noise (SSN) induced by CMOS output buffers is a serious issue in multichip modules as well as single-chip packages to ensure stable operation and to derive inherent speed performance. Multichip modules are expected to have smaller switching noise level than the case of single-chip packages by removing a first-level package and its parasitics. This paper reports the measurement results of switching noises for different types of MCMs using a switching noise generating chip. Two types of test vehicles were fabricated and measurement results were compared. Noise distribution on a ground plane was also measured.
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