Al2O3/InGaAs堆叠中多频cv曲线的TCAD分析

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Pub Date : 2018-03-19 DOI:10.1109/ULIS.2018.8354757

E. Caruso, J. Lin, K. F. Burke, K. Cherkaoui, D. Esseni, F. Gity, S. Monaghan, P. Palestra, P. Hurley, L. Selmi

{"title":"Al2O3/InGaAs堆叠中多频cv曲线的TCAD分析","authors":"E. Caruso, J. Lin, K. F. Burke, K. Cherkaoui, D. Esseni, F. Gity, S. Monaghan, P. Palestra, P. Hurley, L. Selmi","doi":"10.1109/ULIS.2018.8354757","DOIUrl":null,"url":null,"abstract":"This paper reports physics based TCAD simulations of multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs including the AC response of the border traps. The calculations reproduce the experimental inversion and accumulation capacitance versus frequency, and provide a means to profile the space and energy density of states of border traps. A sensitivity analysis of the results to border traps' distribution is carried out changing the trap volume and the oxide capacitance.","PeriodicalId":383788,"journal":{"name":"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks\",\"authors\":\"E. Caruso, J. Lin, K. F. Burke, K. Cherkaoui, D. Esseni, F. Gity, S. Monaghan, P. Palestra, P. Hurley, L. Selmi\",\"doi\":\"10.1109/ULIS.2018.8354757\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports physics based TCAD simulations of multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs including the AC response of the border traps. The calculations reproduce the experimental inversion and accumulation capacitance versus frequency, and provide a means to profile the space and energy density of states of border traps. A sensitivity analysis of the results to border traps' distribution is carried out changing the trap volume and the oxide capacitance.\",\"PeriodicalId\":383788,\"journal\":{\"name\":\"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULIS.2018.8354757\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2018.8354757","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本文报道了基于物理的TCAD模拟In0.53Ga0.47As MOSCAPs的多频C-V曲线，包括边界陷阱的交流响应。计算重现了实验反演和累积电容随频率的变化，并提供了一种描述边界陷阱状态的空间和能量密度的方法。通过改变陷阱体积和氧化物电容，分析了结果对边界陷阱分布的敏感性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks

This paper reports physics based TCAD simulations of multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs including the AC response of the border traps. The calculations reproduce the experimental inversion and accumulation capacitance versus frequency, and provide a means to profile the space and energy density of states of border traps. A sensitivity analysis of the results to border traps' distribution is carried out changing the trap volume and the oxide capacitance.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

自引率

0.00%

发文量