MOSFET和基于tfet的ph敏感ISFET温度依赖性的仿真研究

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI:10.23919/SNW.2017.8242313

Sihyun Kim, D. Kwon, Ryoongbin Lee, D. Kim, Byung-Gook Park

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引用次数: 1

摘要

通过TCAD器件仿真研究了MOSFET和基于tfet的pH敏感ISFET的温度依赖性。比较了两种器件在不同温度下的传递特性和pH灵敏度。由于传导机制的不同，tfet基ISFET表现出优于mosfet基ISFET的热稳定性。

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Simulation study on temprature dependence of MOSFET and TFET-based pH-sensitive ISFET

The temperature dependence of MOSFET and TFET-based pH sensitive ISFET was investigated through TCAD device simulation. The transfer characteristics and the pH sensitivities of both devices at various temperature were compared. TFET-based ISFET exhibits superior thermal stability in contrast with the MOSFET-based ISFET due to the difference of conduction mechanism.

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2017 Silicon Nanoelectronics Workshop (SNW)

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