一种电容式I/O耦合结构的双模基板集成波导滤波器

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2016-07-20 DOI:10.1109/IMWS-AMP.2016.7588442

Yihong Su, Xianqi Lin, Ping Pang, Shilin Liu

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引用次数: 2

摘要

本文讨论了激发双模矩形谐振腔的基本微扰理论。设计了一种中心频率为35ghz的二阶双模滤波器。为了提高滤波器的裙边性能，提出了一种I/O耦合结构。利用I/O耦合，在保持通带特性基本不变的情况下，在通带两侧分别引入32.1GHz、38.5GHz和43GHz的传输零点，大大增加了带外抑制。

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A dual mode substrate integrated waveguide filter with capacitive I/O coupling structure

The basic perturbation theory is discussed in this paper to excite a dual mode rectangular resonator cavity. A two order dual mode filter is designed with the center frequency at 35 GHz. An I/O coupling structure is proposed to improve the skirt performance of the filter. Using the I/O coupling greatly increase the out-of-band rejection by introducing transmission zeros on each side of the passband located at 32.1GHz, 38.5GHz and 43GHz while keep the passband characteristic is almost unchanged.

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来源期刊

2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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