高密度MTP逻辑NVM电源管理应用

2009 IEEE International Memory Workshop Pub Date : 2009-05-10 DOI:10.1109/IMW.2009.5090593

Y. Roizin, E. Pikhay, V. Dayan, A. Heiman

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引用次数: 11

摘要

我们报告了一个无掩码加器嵌入式NVM (Y-Flash)，具有适合电源管理(PM)应用的记录单元区域。存储单元是一种自对准非对称MOS晶体管，通过三维延伸结构与浮栅漏极电容耦合。讨论了新型存储单元的工作原理、阵列结构、NVM模块的设计以及Y-Flash的可靠性。

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High Density MTP Logic NVM for Power Management Applications

We report a no mask adders embedded NVM (Y-Flash) having a record cell area which is suited for power management (PM) applications. The memory cell is a self- aligned asymmetric MOS transistor with drain capacitive coupling to the floating gate (FG) through a three- dimensional extension structure. Operation of the novel memory cell, array organization, design of NVM modules and Y-Flash reliability are addressed.

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2009 IEEE International Memory Workshop

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