基于MilliBeam™和宽束重离子的32nm SOI CMOS 12位200MSps a -to- d转换器单事件效应表征

2017 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2017-07-17 DOI:10.1109/NSREC.2017.8115441

A. Zanchi, M. Cabañas-Holmen, Paul Eaton, Will Burke, R. Brees

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引用次数: 1

摘要

使用MilliBeam™技术在LBNL测试了时钟为200 MSps的12位32nm SOI CMOS管道ADC，在LET高达30.9 MeV·cm2/mg (Kr)时没有出现扰动，而在TAMU下，在0°，60°入射角(Xe和Au)的宽光束照射下，1样品的振幅高达600 LSB, LET高达170 MeVcm2/mg。

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Single-event effects characterization of a 12-bit 200MSps A-to-D converter in 32nm SOI CMOS with MilliBeam™ and broad-beam heavy-ions

A 12-bit 32nm SOI CMOS pipeline ADC clocked at 200 MSps was tested at LBNL with the MilliBeam™ technique and showed no upsets with LET up to 30.9 MeV·cm²/mg (Kr), while 1-sample SETs up to 600 LSB in amplitude were observed with broad-beam exposure at TAMU with 0°, 60° incidence angles (Xe and Au), and LET up to 170 MeVcm²/mg.

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来源期刊

2017 IEEE Radiation Effects Data Workshop (REDW)

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