M. O’Shea, A. Concannon, K. McCarthy, B. Lane, A. Mathewson, M. Slotboom
{"title":"闪存EEPROM单元的宏模型","authors":"M. O’Shea, A. Concannon, K. McCarthy, B. Lane, A. Mathewson, M. Slotboom","doi":"10.1109/ESSDERC.2000.194787","DOIUrl":null,"url":null,"abstract":"An accurate, numerically efficient model for the transient and DC characteristics of Fowler Nordheim based flash EEPROM cells has been developed. This type of model will allow designers to efficiently and competently embed flash memory into their designs.","PeriodicalId":354721,"journal":{"name":"30th European Solid-State Device Research Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Macro Model for Flash EEPROM Cells\",\"authors\":\"M. O’Shea, A. Concannon, K. McCarthy, B. Lane, A. Mathewson, M. Slotboom\",\"doi\":\"10.1109/ESSDERC.2000.194787\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An accurate, numerically efficient model for the transient and DC characteristics of Fowler Nordheim based flash EEPROM cells has been developed. This type of model will allow designers to efficiently and competently embed flash memory into their designs.\",\"PeriodicalId\":354721,\"journal\":{\"name\":\"30th European Solid-State Device Research Conference\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2000.194787\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2000.194787","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An accurate, numerically efficient model for the transient and DC characteristics of Fowler Nordheim based flash EEPROM cells has been developed. This type of model will allow designers to efficiently and competently embed flash memory into their designs.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
