基于Verilog-AMS的多通道读出硅微带专用集成电路前端建模

A. Montiel, R. Casanova, Á. Diéguez
{"title":"基于Verilog-AMS的多通道读出硅微带专用集成电路前端建模","authors":"A. Montiel, R. Casanova, Á. Diéguez","doi":"10.1109/SMACD.2012.6339442","DOIUrl":null,"url":null,"abstract":"Verilog-AMS is used to model the analog front-end of one channel in a multichannel readout ASIC for Silicon microstrips. The modelization in a behavioral language allowed to extract the requirements of the main components of the channel without needing to make the design at transistor level, thus decreasing the design time. This model of a complete channel will be used for further integration with the digital processing electronics of the multichannel ASIC.","PeriodicalId":181205,"journal":{"name":"2012 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Modeling in Verilog-AMS of a front-end for the design of a multichannel readout ASIC for Si microstrips\",\"authors\":\"A. Montiel, R. Casanova, Á. Diéguez\",\"doi\":\"10.1109/SMACD.2012.6339442\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Verilog-AMS is used to model the analog front-end of one channel in a multichannel readout ASIC for Silicon microstrips. The modelization in a behavioral language allowed to extract the requirements of the main components of the channel without needing to make the design at transistor level, thus decreasing the design time. This model of a complete channel will be used for further integration with the digital processing electronics of the multichannel ASIC.\",\"PeriodicalId\":181205,\"journal\":{\"name\":\"2012 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMACD.2012.6339442\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMACD.2012.6339442","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

Verilog-AMS用于对用于硅微带的多通道读出ASIC中的一个通道的模拟前端进行建模。行为语言的建模允许提取通道主要组件的需求,而无需在晶体管级别进行设计,从而减少了设计时间。这种完整通道模型将用于与多通道ASIC的数字处理电子进一步集成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling in Verilog-AMS of a front-end for the design of a multichannel readout ASIC for Si microstrips
Verilog-AMS is used to model the analog front-end of one channel in a multichannel readout ASIC for Silicon microstrips. The modelization in a behavioral language allowed to extract the requirements of the main components of the channel without needing to make the design at transistor level, thus decreasing the design time. This model of a complete channel will be used for further integration with the digital processing electronics of the multichannel ASIC.
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