D-band frequency memristor switch based on monolayer boron nitride

The radiofrequency (RF) switching network system has emerged as an essential future technology in the sixth generation (6G) wireless communications. Many scientists have put a great deal of effort into researching and developing 6G antennas, RF front ends, and wave propagation characterization. However, the conventional RF switches are based on solid-state diode and transistor devices. These volatile solid-state switches cause high energy consumption because they consume both dynamic (during switching) and static (in the idle state) power [1]. Here, we proposed a radiofrequency (RF) switch based on the non-volatile resistive switching (NVRS) memory effects in h-BN [2], [3]. The non-volatile h-BN RF switches consume zero static power and are more energy-efficient than the conventional ones. Specifically, this work demonstrates the switches operating in the D-band (110 – 170 GHz) for the first time, which was absent in the prior reports [4], [5].