M. Ino, H. Sawada, K. Nishimura, M. Urano, H. Suto, S. Date, T. Ishihara, T. Takeda, Y. Kado, H. Inokawa, T. Tsuchiya, Y. Sakakibara, Y. Arita, K. Izumi, K. Takeya, T. Sakai
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引用次数: 7
摘要
绝缘体上硅(SOI)器件有几个优点。小的寄生电容使它们适用于高速、低功率和低电压的lsi。SOI器件无软误差，无闭锁，并且由于完全隔离而具有高密度布局。在本文中，我们报道了一个0.25 /spl μ l /m CMOS/SIMOX 300 kG栅极阵列LSI，使用在低剂量高质量SIMOX衬底上制造的全耗尽mosfet。
Silicon-on-insulator (SOI) devices have several advantages. Small parasitic capacitances make them useful for high-speed, low-power and low-voltage LSIs. SOI devices are soft-error free, latchup free, and have a high-density layout due to complete isolation. In this paper, we report a 0.25 /spl mu/m CMOS/SIMOX 300 kG gate array LSI using fully-depleted MOSFETs fabricated on a low-dose high-quality SIMOX substrate.
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