Comparison of SOI MOSFET self-heating measurements by gate resistance thermometry and small-signal drain admittance extraction

It is demonstrated that thermal resistances of SOI MOSFETs obtained by two different methods (gate resistance thermometry and small-signal drain conductance) show very good agreement. This confirms that the full device temperature rise can be associated with a single thermal time constant. Hence, the time constant of the order of 1 /spl mu/s seen in the measurements is the dominant effect on self-heating for all practical purposes. The comparison shows that both techniques yield good results; the drain conductance technique has the further advantage that standard transistors may be used.