{"title":"应力诱导的LC振荡器性能退化","authors":"E. Xiao, P. P. Ghosh","doi":"10.1109/FREQ.2005.1573993","DOIUrl":null,"url":null,"abstract":"Stress induced performance degradation in CMOS LC oscillators are investigated systematically. Three architectures of LC oscillators are studied, including NMOS, PMOS, and complementary LC oscillators, for 0.16 /spl mu/m CMOS technology. The 0.16 /spl mu/m wafers are stressed, and the aged parameters are extracted. The aged parameters are used to study the stress induced parameter degradations of LC oscillators, including phase noise, amplitude, and the tuning range. After the comparison among the three LC oscillators, it is shown that the complementary LC oscillators are more reliable.","PeriodicalId":108334,"journal":{"name":"Proceedings of the 2005 IEEE International Frequency Control Symposium and Exposition, 2005.","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Stress induced performance degradation in LC oscillators\",\"authors\":\"E. Xiao, P. P. Ghosh\",\"doi\":\"10.1109/FREQ.2005.1573993\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Stress induced performance degradation in CMOS LC oscillators are investigated systematically. Three architectures of LC oscillators are studied, including NMOS, PMOS, and complementary LC oscillators, for 0.16 /spl mu/m CMOS technology. The 0.16 /spl mu/m wafers are stressed, and the aged parameters are extracted. The aged parameters are used to study the stress induced parameter degradations of LC oscillators, including phase noise, amplitude, and the tuning range. After the comparison among the three LC oscillators, it is shown that the complementary LC oscillators are more reliable.\",\"PeriodicalId\":108334,\"journal\":{\"name\":\"Proceedings of the 2005 IEEE International Frequency Control Symposium and Exposition, 2005.\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-08-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2005 IEEE International Frequency Control Symposium and Exposition, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/FREQ.2005.1573993\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2005 IEEE International Frequency Control Symposium and Exposition, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FREQ.2005.1573993","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Stress induced performance degradation in LC oscillators
Stress induced performance degradation in CMOS LC oscillators are investigated systematically. Three architectures of LC oscillators are studied, including NMOS, PMOS, and complementary LC oscillators, for 0.16 /spl mu/m CMOS technology. The 0.16 /spl mu/m wafers are stressed, and the aged parameters are extracted. The aged parameters are used to study the stress induced parameter degradations of LC oscillators, including phase noise, amplitude, and the tuning range. After the comparison among the three LC oscillators, it is shown that the complementary LC oscillators are more reliable.
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