A 4.3-mW mm-Wave Divide-by-Two Circuit with 30% Locking Range in 28-nm FD-SOI CMOS

A mm-wave divide-by-two circuit with high injection efficiency, implemented in a 28-nm fully-depleted silicon-on-insulator (FD-SOI) CMOS process is demonstrated stand-alone, as well as using an on-chip voltage controlled oscillator (VCO) as the input signal source. Measurements show that the divider has a 30.1 % tuning range centered at an output frequency of 24 GHz, at an input signal power of -1.5 dBm, and a power consumption of 4.3 mW from a 0.9 V supply. The VCO and divider combination has a tuning range of 10.2 %, centered at an output frequency of 30.2 GHz, at a total power consumption of 6.3 mW, and an output phase noise of -111 dBc/Hz at 10 MHz offset. The active area of the divider is 0.032 mm2 and of the divider and VCO combination 0.043 mm2.