J. Ahmadi-Farsani, B. Linares-Barranco, T. Serrano-Gotarredona
{"title":"snn中与忆阻交叉栅柔性交互作用的辅助脉冲扩展器和电流衰减器电路","authors":"J. Ahmadi-Farsani, B. Linares-Barranco, T. Serrano-Gotarredona","doi":"10.1109/ICECS49266.2020.9294887","DOIUrl":null,"url":null,"abstract":"This paper presents a pulse-extender, a delay-element, and a current-attenuator as auxiliary circuits that make it possible to have flexible interaction with memristor crossbars in spiking neural networks. In the presynaptic part, the pulse-extender makes the inputs compatible with the pulsed-characterization of memristors. In the post-synaptic part, the current attenuator relaxes the system in terms of requiring low-offset amplifiers and also makes it possible to design neurons with small membrane capacitors. The circuits are fabricated in a CMOS 180nm technology. The measurements verify that these blocks play an important role in reaching an SNN with real-time performance.","PeriodicalId":404022,"journal":{"name":"2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Auxiliary Pulse-Extender and Current-Attenuator Circuits for Flexible Interaction with Memristive Crossbars in SNNs\",\"authors\":\"J. Ahmadi-Farsani, B. Linares-Barranco, T. Serrano-Gotarredona\",\"doi\":\"10.1109/ICECS49266.2020.9294887\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a pulse-extender, a delay-element, and a current-attenuator as auxiliary circuits that make it possible to have flexible interaction with memristor crossbars in spiking neural networks. In the presynaptic part, the pulse-extender makes the inputs compatible with the pulsed-characterization of memristors. In the post-synaptic part, the current attenuator relaxes the system in terms of requiring low-offset amplifiers and also makes it possible to design neurons with small membrane capacitors. The circuits are fabricated in a CMOS 180nm technology. The measurements verify that these blocks play an important role in reaching an SNN with real-time performance.\",\"PeriodicalId\":404022,\"journal\":{\"name\":\"2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS)\",\"volume\":\"109 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECS49266.2020.9294887\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS49266.2020.9294887","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Auxiliary Pulse-Extender and Current-Attenuator Circuits for Flexible Interaction with Memristive Crossbars in SNNs
This paper presents a pulse-extender, a delay-element, and a current-attenuator as auxiliary circuits that make it possible to have flexible interaction with memristor crossbars in spiking neural networks. In the presynaptic part, the pulse-extender makes the inputs compatible with the pulsed-characterization of memristors. In the post-synaptic part, the current attenuator relaxes the system in terms of requiring low-offset amplifiers and also makes it possible to design neurons with small membrane capacitors. The circuits are fabricated in a CMOS 180nm technology. The measurements verify that these blocks play an important role in reaching an SNN with real-time performance.