c波段应用的50W GaN MMIC功率放大器

2022 IEEE Ninth International Conference on Communications and Electronics (ICCE) Pub Date : 2022-07-27 DOI:10.1109/ICCE55644.2022.9852079

N. Nguyen, Sanghun Lee, C. Huynh

{"title":"c波段应用的50W GaN MMIC功率放大器","authors":"N. Nguyen, Sanghun Lee, C. Huynh","doi":"10.1109/ICCE55644.2022.9852079","DOIUrl":null,"url":null,"abstract":"This paper describes a C-band monolithic microwave integrated circuit (MMIC) high power amplifier (HPA) for Synthetic Aperture Radar (SAR) exploiting 0.25 $\\mu$m GaN HEMT process on a SiC substrate. The 2-stage HPA has the output power of 50-Watt, power-added efficiency (PAE) of 45.5-49.6% and an associated power gain of 20 dB from 5 to 7 GHz. With a compact die size of 4.5 mm x 2.625 mm, the HPA exhibits the output power density of 4.23 W/mm2 showing the strong potential in SAR systems and others.","PeriodicalId":388547,"journal":{"name":"2022 IEEE Ninth International Conference on Communications and Electronics (ICCE)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Compact 50W GaN MMIC Power Amplifier for C-band applications\",\"authors\":\"N. Nguyen, Sanghun Lee, C. Huynh\",\"doi\":\"10.1109/ICCE55644.2022.9852079\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a C-band monolithic microwave integrated circuit (MMIC) high power amplifier (HPA) for Synthetic Aperture Radar (SAR) exploiting 0.25 $\\\\mu$m GaN HEMT process on a SiC substrate. The 2-stage HPA has the output power of 50-Watt, power-added efficiency (PAE) of 45.5-49.6% and an associated power gain of 20 dB from 5 to 7 GHz. With a compact die size of 4.5 mm x 2.625 mm, the HPA exhibits the output power density of 4.23 W/mm2 showing the strong potential in SAR systems and others.\",\"PeriodicalId\":388547,\"journal\":{\"name\":\"2022 IEEE Ninth International Conference on Communications and Electronics (ICCE)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Ninth International Conference on Communications and Electronics (ICCE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCE55644.2022.9852079\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Ninth International Conference on Communications and Electronics (ICCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCE55644.2022.9852079","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了一种用于合成孔径雷达(SAR)的c波段单片微波集成电路(MMIC)高功率放大器(HPA)，该放大器在SiC衬底上利用0.25 $\mu$m的GaN HEMT工艺。2级HPA的输出功率为50瓦，功率附加效率(PAE)为45.5-49.6%，在5- 7 GHz范围内的相关功率增益为20 dB。凭借4.5 mm x 2.625 mm的紧凑芯片尺寸，HPA的输出功率密度为4.23 W/mm2，在SAR系统和其他系统中显示出强大的潜力。

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A Compact 50W GaN MMIC Power Amplifier for C-band applications

This paper describes a C-band monolithic microwave integrated circuit (MMIC) high power amplifier (HPA) for Synthetic Aperture Radar (SAR) exploiting 0.25 $\mu$m GaN HEMT process on a SiC substrate. The 2-stage HPA has the output power of 50-Watt, power-added efficiency (PAE) of 45.5-49.6% and an associated power gain of 20 dB from 5 to 7 GHz. With a compact die size of 4.5 mm x 2.625 mm, the HPA exhibits the output power density of 4.23 W/mm2 showing the strong potential in SAR systems and others.

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2022 IEEE Ninth International Conference on Communications and Electronics (ICCE)

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