等离子体过程控制的光学发射光谱

P. P. Ward
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引用次数: 8

摘要

电子元件和印刷线路板(PWB)的等离子蚀刻和涂膜过程是难以预测和控制的。大多数等离子体工艺的不均匀性和对环境变化的敏感性使其难以每天保持工艺稳定性。为了确保等离子体工艺性能,必须使用减重券或等离子体后破坏性检测。这些技术的问题是,它们不是实时方法,不允许立即诊断和过程纠正。这些测试通常需要去掉一批中的一部分,以确保其余部分的完整性。由于这些测试通过血浆后诊断验证了一个成功的周期,较差的测试结果通常决定了一个批次不合格,由此产生的部件无法使用。这些测试是整个制造成本中昂贵的一部分。一种更有效的测试方法将允许持续监测等离子体条件和过程控制。在被处理的零件损坏之前,应检测并纠正工艺异常。实时监测将允许即时修正。多站点监测将允许在一个系统内进行过程映射或同时监测多个系统。在等离子体装置外部进行的光学发射光谱可以在不干扰辉光放电的情况下进行这种多功能分析。本文探讨了非侵入式原位过程控制的光学发射光谱技术,以及该技术在过程控制、失效分析和终点确定方面的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Plasma process control with optical emission spectroscopy
Plasma processes for etching and desmear of electronic components and printed wiring boards (PWB) are difficult to predict and control. Non-uniformity of most plasma processes and sensitivity to environmental changes make it difficult to maintain process stability from day to day. To assure plasma process performance, weight loss coupons or post-plasma destructive testing must be used. The problem with these techniques is that they are not real-time methods and do not allow for immediate diagnosis and process correction. These tests often require scrapping some fraction of a batch to insure the integrity of the rest. Since these tests verify a successful cycle with post-plasma diagnostics, poor test results often determine that a batch is substandard and the resulting parts unusable. These tests are a costly part of the overall fabrication cost. A more efficient method of testing would allow for constant monitoring of plasma conditions and process control. Process anomalies should be detected and corrected before the parts being treated are damaged. Real time monitoring would allow for instantaneous corrections. Multiple site monitoring would allow for process mapping within one system or simultaneous monitoring of multiple systems. Optical emission spectroscopy conducted external to the plasma apparatus would allow for this sort of multifunctional analysis without perturbing the glow discharge. In this paper, optical emission spectroscopy for non-intrusive, in situ process control is explored along with applications of this technique towards process control, failure analysis and endpoint determination.
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