f类功率放大器，具有900MHz的高功率附加效率

2014 2nd International Conference on Electronic Design (ICED) Pub Date : 2014-08-01 DOI:10.1109/ICED.2014.7015786

M. Al-Ajmi, A. AlBlushi, R. Al-Mamari, Z. Nadir, M. Bait-Suwailam

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引用次数: 0

摘要

本文介绍了一种用于GSM发射机的高效f类功率放大器的设计与实现。采用GaAs pHEMT晶体管，在900MHz频率下设计、仿真并实现了一个典型的f类电路。该设计实现了95.5%的理论功率附加效率和28.9dBm的输出功率。为了验证所设计的电路，还进行了实验工作。达成了很好的协议。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Class-F power amplifier with high power added efficiency for 900MHz

This paper presents a design and implementation of a Power Amplifier for GSM Transmitters using a high efficiency class-F type. A typical class-F circuit has been designed, simulated and implemented using GaAs pHEMT transistor at a frequency of 900MHz. The proposed design achieves 95.5% of theoretical Power Added Efficiency and 28.9dBm output power. To validate the designed circuit, experimental work is also conducted. Good agreement is achieved.

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来源期刊

2014 2nd International Conference on Electronic Design (ICED)

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