{"title":"p- mosfet中陷阱位置和阈值电压数目依赖性的影响","authors":"S. Das, Tara Prasanna Dash, S. Dey, C. K. Maiti","doi":"10.1109/ISDCS.2018.8379637","DOIUrl":null,"url":null,"abstract":"This work focuses on modeling of the impact of trap position and number dependence on the variation of threshold voltages in nanoscale p-MOSFETs. Reliability degradation mechanisms are studied using four-state nonradiative multiphonon model. A novel reliability technology TCAD framework has been developed to predict the threshold voltage variation during device design phase. The influence of trap number and spatial distribution on the device threshold voltage has been investigated from simulation.","PeriodicalId":374239,"journal":{"name":"2018 International Symposium on Devices, Circuits and Systems (ISDCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of trap position and number dependence of threshold voltage in p-MOSFETs\",\"authors\":\"S. Das, Tara Prasanna Dash, S. Dey, C. K. Maiti\",\"doi\":\"10.1109/ISDCS.2018.8379637\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work focuses on modeling of the impact of trap position and number dependence on the variation of threshold voltages in nanoscale p-MOSFETs. Reliability degradation mechanisms are studied using four-state nonradiative multiphonon model. A novel reliability technology TCAD framework has been developed to predict the threshold voltage variation during device design phase. The influence of trap number and spatial distribution on the device threshold voltage has been investigated from simulation.\",\"PeriodicalId\":374239,\"journal\":{\"name\":\"2018 International Symposium on Devices, Circuits and Systems (ISDCS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Symposium on Devices, Circuits and Systems (ISDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDCS.2018.8379637\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Symposium on Devices, Circuits and Systems (ISDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDCS.2018.8379637","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of trap position and number dependence of threshold voltage in p-MOSFETs
This work focuses on modeling of the impact of trap position and number dependence on the variation of threshold voltages in nanoscale p-MOSFETs. Reliability degradation mechanisms are studied using four-state nonradiative multiphonon model. A novel reliability technology TCAD framework has been developed to predict the threshold voltage variation during device design phase. The influence of trap number and spatial distribution on the device threshold voltage has been investigated from simulation.
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