ST-DDR4自旋转移转矩磁阻随机存取存储器(STT-MRAM)的单事件效应表征

Sergeh Vartanian, J. Yang-Scharlotta, G. Allen, A. Daniel, F. Mancoff, D. Symalla, Andy Olsen
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引用次数: 1

摘要

我们提出了Everspin Technologies 1Gb非易失性ST-DDR4自旋传递扭矩MRAM的单事件效应(SEE)评估。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Single Event Effects Characterization of the ST-DDR4 Spin-transfer Torque Magnetoresistive Random Access Memory (STT-MRAM)
We present single event effects (SEE) evaluation of the Everspin Technologies 1Gb non-volatile ST-DDR4 spin-transfer torque MRAM.
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