{"title":"基于misfet的传感器特性建模误差","authors":"B. Podlepetsky, N. Samotaev","doi":"10.1109/MIEL.2019.8889573","DOIUrl":null,"url":null,"abstract":"The accuracy of circuits', electrical and electrophysical models of MIS transistor sensors' elements, taking into account the errors of simplifying assumptions, approximations, extrapolations and experimental dispersions' characteristics in determining the parameters of the models and measured physical quantity is estimated.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling Errors of the MISFET-Based Sensors' Characteristics\",\"authors\":\"B. Podlepetsky, N. Samotaev\",\"doi\":\"10.1109/MIEL.2019.8889573\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The accuracy of circuits', electrical and electrophysical models of MIS transistor sensors' elements, taking into account the errors of simplifying assumptions, approximations, extrapolations and experimental dispersions' characteristics in determining the parameters of the models and measured physical quantity is estimated.\",\"PeriodicalId\":391606,\"journal\":{\"name\":\"2019 IEEE 31st International Conference on Microelectronics (MIEL)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 31st International Conference on Microelectronics (MIEL)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIEL.2019.8889573\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2019.8889573","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling Errors of the MISFET-Based Sensors' Characteristics
The accuracy of circuits', electrical and electrophysical models of MIS transistor sensors' elements, taking into account the errors of simplifying assumptions, approximations, extrapolations and experimental dispersions' characteristics in determining the parameters of the models and measured physical quantity is estimated.