光发射电流对双势垒光接收结构光谱特性影响的研究[NiSi-Si-TiSi/sub 2/]

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI:10.1109/MIEL.2002.1003206

Kh. Khudaverdyan, H. Harutyunyan

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引用次数: 1

摘要

目前研究的用激光再结晶的硅化物-硅-硅化物型光接收结构在多功能操作上与传统的光接收结构有很大的不同。其中，光敏度可以由外部电压控制，由于光电流依赖于标记移位点的外部电压，该器件可以用作零频率计。这项工作是第一次研究接触的光电发射对上述结构的光谱特性的影响。

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Study of photo-emission current impact on spectral characteristics of double barrier photo-receiving structure [NiSi-Si-TiSi/sub 2/]

The silicide-silicon-silicide type photoreceiving structures recrystallized by laser, currently studied differ efficiently from conventional photoreceivers in their multifunctional operation. In them, the photosensitivity can be controlled by the external voltage and the device can be used as a zero frequency gauge due to dependence of the photocurrent on the external voltage of the mark shift point. This work is the first to investigate the influence of the photoemission from the contact on the spectral characteristics of the afore-mentioned structures.

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来源期刊

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)

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