具有优越迁移性能的短沟道BEOL ZnON薄膜晶体管

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI:10.1109/VLSI-TSA.2016.7480533

Chin-I Kuan, Horng-Chih Lin, Pei-Wen Li, Tiao-Yuan Huang

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引用次数: 2

摘要

本文首次报道了性能优异的亚微米和亚100nm ZnON tft。在通道长度为0.5 μm和75 nm的ZnON tft中，测量到的场效应迁移率值分别高达55和9.2 cm2/V-s。这是迄今为止报道的具有可比通道长度的氧化物半导体tft的最高值。结果证实，ZnON tft是构建集成在芯片中的BEOL电路的有效构建块。

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Short-channel BEOL ZnON thin-film transistors with superior mobility performance

This work reports the first experimental submicron and sub-100 nm ZnON TFTs with excellent performance. Field-effect mobility values as high as 55 and 9.2 cm2/V-s were measured from ZnON TFTs with channel lengths of 0.5 μm and 75 nm, respectively. Those are the highest values ever reported on oxide-semiconductor TFTs of comparable channel length. The results confirm ZnON TFTs as an effective building block for the construction of BEOL circuits integrated in a chip.

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2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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