工艺变化对VLSI互连中延迟最小化总线编码方案的影响

C. Raghunandan, K. S. Sainarayanan, M. Srinivas
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摘要

在深亚微米(DSM)技术中,工艺变化会对器件和互连性能产生重大影响。在本文中,作者讨论了过程参数变化对总线编码方案延迟最小化的影响。结果表明,如果考虑到过程的可变性,则母线的有效电容(Ceff)将发生变化,因此每个串扰类引起的延迟量将发生变化。在不同的技术节点(180nm、130nm、90nm和65nm)上对不同尺寸的互连线(三比特总线模型)进行SPICE仿真,以找出工艺变化对总线有效电容的影响。最后,详细讨论了进程变化对延迟最小化总线编码方案的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Impact of process variations on bus-encoding schemes for delay minimization in VLSI interconnects
Process variations can have a significant impact on both device and interconnect performance in deep submicron (DSM) technologies. In this paper, authors discuss the impact of process parameter variations on bus-encoding schemes for delay minimization. It is shown that if process variability is taken into consideration, there will be a change in effective capacitance (Ceff) of the bus lines because of which the amount of delay that each crosstalk class causes is going to vary. SPICE simulations have been carried out for interconnect lines (three bit bus model) of different dimensions at different technology nodes (180, 130, 90 and 65 nm) to find out the effect of process variability on the effective capacitance of bus lines. Finally, the impact of process variations on bus-encoding schemes for delay minimization is discussed in detail.
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