{"title":"硅绝缘体上Al/sub - 2/O/sub - 3/-ZrO/sub - 2/栅极介质的结构和电学性能","authors":"M. Zhu, P. Chen, R. Fu, W. Liu, C. Lin, P. Chu","doi":"10.1109/IWJT.2004.1306859","DOIUrl":null,"url":null,"abstract":"Al/sub 2/O/sub 3/-ZrO/sub 2/ composite films were prepared on silicon-on-insulator (SOI) substrate by ultra-high vacuum electron-beam co-evaporation. The crystallization temperature, microstructures and surface morphology of the films during high temperature rapid thermal annealing (RTA) in N/sub 2/ ambient were studied by x-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM). The amorphous structure of the Al/sub 2/O/sub 3/-ZrO/sub 2/ film is maintained up to a post-annealing temperature of 900/spl deg/C and the expansion of the interfacial layer at high temperature is suppressed. Moreover, the current-voltage characteristic was measured with an Al/Al/sub 2/O/sub 3/-ZrO/sub 2//Si MIS structure fabricated on the films, and the result indicates excellent leakage current properties.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"429 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural and electrical properties of Al/sub 2/O/sub 3/-ZrO/sub 2/ gate dielectrics on silicon-on-insulator\",\"authors\":\"M. Zhu, P. Chen, R. Fu, W. Liu, C. Lin, P. Chu\",\"doi\":\"10.1109/IWJT.2004.1306859\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Al/sub 2/O/sub 3/-ZrO/sub 2/ composite films were prepared on silicon-on-insulator (SOI) substrate by ultra-high vacuum electron-beam co-evaporation. The crystallization temperature, microstructures and surface morphology of the films during high temperature rapid thermal annealing (RTA) in N/sub 2/ ambient were studied by x-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM). The amorphous structure of the Al/sub 2/O/sub 3/-ZrO/sub 2/ film is maintained up to a post-annealing temperature of 900/spl deg/C and the expansion of the interfacial layer at high temperature is suppressed. Moreover, the current-voltage characteristic was measured with an Al/Al/sub 2/O/sub 3/-ZrO/sub 2//Si MIS structure fabricated on the films, and the result indicates excellent leakage current properties.\",\"PeriodicalId\":342825,\"journal\":{\"name\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"volume\":\"429 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2004.1306859\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306859","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Structural and electrical properties of Al/sub 2/O/sub 3/-ZrO/sub 2/ gate dielectrics on silicon-on-insulator
Al/sub 2/O/sub 3/-ZrO/sub 2/ composite films were prepared on silicon-on-insulator (SOI) substrate by ultra-high vacuum electron-beam co-evaporation. The crystallization temperature, microstructures and surface morphology of the films during high temperature rapid thermal annealing (RTA) in N/sub 2/ ambient were studied by x-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM). The amorphous structure of the Al/sub 2/O/sub 3/-ZrO/sub 2/ film is maintained up to a post-annealing temperature of 900/spl deg/C and the expansion of the interfacial layer at high temperature is suppressed. Moreover, the current-voltage characteristic was measured with an Al/Al/sub 2/O/sub 3/-ZrO/sub 2//Si MIS structure fabricated on the films, and the result indicates excellent leakage current properties.
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