{"title":"用多晶硅微结构制备衍射光栅x射线掩模","authors":"K. Shimada, H. Tsujii, D. Noda, T. Hattori","doi":"10.1109/MHS.2007.4420897","DOIUrl":null,"url":null,"abstract":"There is an X-ray Talbot interferometer in one of the imaging technology by X-ray phase information. A diffraction grating is necessary for a Talbot interferometer, but the manufacture is difficult. In this study, we decided to make a diffraction grating to use it for a Talbot interferometer in X-ray lithography. For the development of a fine and high-precision X-ray mask, a rectangular structure of a high aspect ratio was formed through conventional UV lithography incorporating an ICP-based Si dry etching process that enables fine patterning. We succeeded in making 2.2 mum in width, a Poly-Si structure body of 4.7 mum high. We succeeded in forming 2.6 mum in width, a gold absorber of 4.2 mum high by Au electrolysis plating. We succeeded in making 2.2 mum in width, a SU-8 structure body of 10 mum high by X-ray lithography. Conventionally, we were able to complete a fine X-ray mask.","PeriodicalId":161669,"journal":{"name":"2007 International Symposium on Micro-NanoMechatronics and Human Science","volume":"186 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Fabrication of X-ray Mask using Poly-Si Microstructure for Diffraction Grating\",\"authors\":\"K. Shimada, H. Tsujii, D. Noda, T. Hattori\",\"doi\":\"10.1109/MHS.2007.4420897\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"There is an X-ray Talbot interferometer in one of the imaging technology by X-ray phase information. A diffraction grating is necessary for a Talbot interferometer, but the manufacture is difficult. In this study, we decided to make a diffraction grating to use it for a Talbot interferometer in X-ray lithography. For the development of a fine and high-precision X-ray mask, a rectangular structure of a high aspect ratio was formed through conventional UV lithography incorporating an ICP-based Si dry etching process that enables fine patterning. We succeeded in making 2.2 mum in width, a Poly-Si structure body of 4.7 mum high. We succeeded in forming 2.6 mum in width, a gold absorber of 4.2 mum high by Au electrolysis plating. We succeeded in making 2.2 mum in width, a SU-8 structure body of 10 mum high by X-ray lithography. Conventionally, we were able to complete a fine X-ray mask.\",\"PeriodicalId\":161669,\"journal\":{\"name\":\"2007 International Symposium on Micro-NanoMechatronics and Human Science\",\"volume\":\"186 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 International Symposium on Micro-NanoMechatronics and Human Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MHS.2007.4420897\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Symposium on Micro-NanoMechatronics and Human Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MHS.2007.4420897","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fabrication of X-ray Mask using Poly-Si Microstructure for Diffraction Grating
There is an X-ray Talbot interferometer in one of the imaging technology by X-ray phase information. A diffraction grating is necessary for a Talbot interferometer, but the manufacture is difficult. In this study, we decided to make a diffraction grating to use it for a Talbot interferometer in X-ray lithography. For the development of a fine and high-precision X-ray mask, a rectangular structure of a high aspect ratio was formed through conventional UV lithography incorporating an ICP-based Si dry etching process that enables fine patterning. We succeeded in making 2.2 mum in width, a Poly-Si structure body of 4.7 mum high. We succeeded in forming 2.6 mum in width, a gold absorber of 4.2 mum high by Au electrolysis plating. We succeeded in making 2.2 mum in width, a SU-8 structure body of 10 mum high by X-ray lithography. Conventionally, we were able to complete a fine X-ray mask.