一种利用单氧化阱随机电报噪声的低功耗真随机数发生器

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers Pub Date : 2006-09-18 DOI:10.1109/ISSCC.2006.1696222

R. Brederlow, R. Prakash, C. Paulus, R. Thewes

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引用次数: 119

摘要

利用小面积mosfet中单个氧化陷阱产生的噪声，结合内置冗余，实现了一个真正的随机数发生器。该电路在0.12mum CMOS中面积为0.009mm2，在200kb/s随机输出数据时消耗50muW。该概念对环境噪声和电源电压变化具有鲁棒性，因此适合在安全控制器内运行

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A low-power true random number generator using random telegraph noise of single oxide-traps

A true random number generator is realized by utilizing the noise produced by single oxide traps in small-area MOSFETs in combination with built-in redundancy. The circuit has an area of 0.009mm2 in 0.12mum CMOS and consumes 50muW at 200kb/s random output data. The concept is robust against environmental noise and supply-voltage variations and is thus suitable for operation within security controllers

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2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers

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