Impact of electron effective mass variation on the performance of InAs/GaSb Electron-Hole Bilayer Tunneling Field-Effect Transistor

In the roadmap for the optimization of Electron-Hole Bilayer Tunneling Field-Effect Transistors (EHBTFETs), the employment of III-V compounds is regarded as an appealing solution due to their direct band-to-band tunneling injection. In order to achieve both n and p acceptable operation channels, the combination of As- and Sb-based III-V materials leads to the proposal of a heterosturcture InAs/GaSb-EHBTFET. In this paper, we analyze the impact that the required ultrathin InAs layers have on the electron effective mass and, subsequently, on the device performance.