纳米级互补金属氧化物半导体(CMOS)用硅化镍的最佳Ni/Co厚度提取和两步快速热处理

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI:10.1109/IWJT.2004.1306775

J. Yun, Soon-Young Oh, H. Ji, Bin-Feng Huang, Y. Park, Seong-Hyung Park, Heui-Seung Lee, Dae-Byung Kim, Ui-Sik Kim, Han-Seob Cha, Sang Hu, Jeong‐gun Lee, H. Lee

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引用次数: 3

摘要

NiSi是一种极具吸引力的硅化材料，可应用于纳米级cmosfet。然而，NiSi薄膜在硅化后退火后的降解是NiSi的严重缺点之一。Ni/Co双层被认为是最稳定的硅化物结构之一，用于提高热稳定性。形成的双层由上保护层(CoSi/sub x/)和下导电层(NiSi)组成，它们的作用不同。本研究对纳米级cmosfet的Ni/Co比和工艺条件进行了优化研究。

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Optimal Ni/Co thickness extraction and two step rapid thermal process of the nickel-silicide for nanoscale complementary metal oxide semiconductor (CMOS) application

NiSi is an attractive silicide material to be applied in the nanoscale CMOSFETs. However, degradation of NiSi film after the post-silicidation annealing is one of serious demerits of NiSi. Ni/Co bi-layer is known as one of the most stable silicide structure for the improvement of the thermal stability. The formed bi-layer consists of the upper protection layer (CoSi/sub x/) and the lower conduction layer (NiSi) and their roles are different from each other. In this study, optimization of Ni/Co ratio and process condition is investigated for the nanoscale CMOSFETs.

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The Fourth International Workshop on Junction Technology, 2004. IWJT '04.

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