具有成本效益的印刷忆阻器制造和分析

K. Choi, M. Awais, Hyung Chan Kim, Y. Doh
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引用次数: 3

摘要

介绍了不同金属-绝缘体-金属(MIM)结构的印刷忆阻器的制备及其忆阻性能。目前研究的印刷技术包括电流体动力印刷(EHDP)和卷到版。用于电极沉积的材料是银(Ag)和氧化铟钛(ITO),而氧化锆(ZrO2)和氧化石墨烯(GO)被用于聚酰亚胺(PI)衬底上两个电极之间的夹层。观察了具有显著关/通比的所有MIM结构的电稳定双极电阻开关行为。关于器件尺寸及其电流电压(IV)行为的分析与所采用的印刷电子技术证实了它们具有成本效益的记忆器件制造的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Cost-effective printed memristor fabrication and analysis
Fabrication of the printed memristors and their memristive behavior have been presented for different metal-insulator-metal (MIM) structures. The printing techniques studied for the current work includes electrohydrodynamic printing (EHDP) and roll-to-plate. The materials used for the electrode deposition are silver (Ag) and indium titanium oxide (ITO) while zirconium oxide (ZrO2) and graphene oxide (GO) have been used for the sandwich layer between two electrodes on a polyimide (PI) substrate. Electrically stable bipolar resistive switching behavior of all the MIM structures with significant Off/On ratio has been observed. The analysis regarding device dimensions and its current voltage (IV) behavior with respect to the employed printed electronic techniques confirms their feasibility for the cost-effective memristive device fabrication.
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