{"title":"基于CNTFET的模拟和数字电路开发研究","authors":"Manoj Kumar Tomar, Vimlesh Singh, Laxya Laxya","doi":"10.1109/RDCAPE52977.2021.9633592","DOIUrl":null,"url":null,"abstract":"In the electronic manufacturing industry approximately 95% of electronic devices are manufactured by silicon. Due to excessive use of silicon its reaches to the saturation level because to exploit more properties of its make this extraction process expensive. Carbon is one such material which has potential to replace silicon. Carbon nano tubes (CNT) are one of promising structure of carbon atoms that work on 22nm more effectively than silicon. Design of Field effect transistor (FET) by the CNT is encouraging because it enriches the fundamental silicon-based Metal oxide semiconductor field effect transistor (MOSFET) and it could lead to an increase in the effectiveness of Moore's law even further. The CNT-based FET (Cntfet) is a CNTFET that has been used appreciably within the implementation of electronic circuits. This article gives the maximum superior literature associated with carbon nanotube structure, CNT based FET and CNTFET associated circuit design. An assessment based on analog and digital circuits on design by CNTFET is discussed. CNTFET has advanced the overall performance of each analog and digital circuit. The work is going to be terribly helpful for folks operating within the field of Carbon Nano Tube based analog and digital electronic circuit design.","PeriodicalId":424987,"journal":{"name":"2021 4th International Conference on Recent Developments in Control, Automation & Power Engineering (RDCAPE)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Study on Development of CNTFET Based Analog and Digital Circuits\",\"authors\":\"Manoj Kumar Tomar, Vimlesh Singh, Laxya Laxya\",\"doi\":\"10.1109/RDCAPE52977.2021.9633592\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the electronic manufacturing industry approximately 95% of electronic devices are manufactured by silicon. Due to excessive use of silicon its reaches to the saturation level because to exploit more properties of its make this extraction process expensive. Carbon is one such material which has potential to replace silicon. Carbon nano tubes (CNT) are one of promising structure of carbon atoms that work on 22nm more effectively than silicon. Design of Field effect transistor (FET) by the CNT is encouraging because it enriches the fundamental silicon-based Metal oxide semiconductor field effect transistor (MOSFET) and it could lead to an increase in the effectiveness of Moore's law even further. The CNT-based FET (Cntfet) is a CNTFET that has been used appreciably within the implementation of electronic circuits. This article gives the maximum superior literature associated with carbon nanotube structure, CNT based FET and CNTFET associated circuit design. An assessment based on analog and digital circuits on design by CNTFET is discussed. CNTFET has advanced the overall performance of each analog and digital circuit. The work is going to be terribly helpful for folks operating within the field of Carbon Nano Tube based analog and digital electronic circuit design.\",\"PeriodicalId\":424987,\"journal\":{\"name\":\"2021 4th International Conference on Recent Developments in Control, Automation & Power Engineering (RDCAPE)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 4th International Conference on Recent Developments in Control, Automation & Power Engineering (RDCAPE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RDCAPE52977.2021.9633592\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 4th International Conference on Recent Developments in Control, Automation & Power Engineering (RDCAPE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RDCAPE52977.2021.9633592","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Study on Development of CNTFET Based Analog and Digital Circuits
In the electronic manufacturing industry approximately 95% of electronic devices are manufactured by silicon. Due to excessive use of silicon its reaches to the saturation level because to exploit more properties of its make this extraction process expensive. Carbon is one such material which has potential to replace silicon. Carbon nano tubes (CNT) are one of promising structure of carbon atoms that work on 22nm more effectively than silicon. Design of Field effect transistor (FET) by the CNT is encouraging because it enriches the fundamental silicon-based Metal oxide semiconductor field effect transistor (MOSFET) and it could lead to an increase in the effectiveness of Moore's law even further. The CNT-based FET (Cntfet) is a CNTFET that has been used appreciably within the implementation of electronic circuits. This article gives the maximum superior literature associated with carbon nanotube structure, CNT based FET and CNTFET associated circuit design. An assessment based on analog and digital circuits on design by CNTFET is discussed. CNTFET has advanced the overall performance of each analog and digital circuit. The work is going to be terribly helpful for folks operating within the field of Carbon Nano Tube based analog and digital electronic circuit design.