缓冲结构对高压FWDs静态和动态坚固性的影响

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487989

B. Heinze, H. Felsl, A. Mauder, H. Schulze, J. Lutz

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引用次数: 25

摘要

自由旋转二极管(FWDs)的设计要求能够抵抗静态和动态雪崩。因此，我们研究了不同缓冲结构的影响和不同体积参数的影响。通过数值装置模拟，分析了缓冲掺杂、基底掺杂和基底宽度对FWDs静、动态性能的影响。我们展示了设计良好的缓冲器的坚固性及其与静态反向特性的一致性。

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Influence of buffer structures on static and dynamic ruggedness of high voltage FWDs

It is required to design free wheeling diodes (FWDs) to be robust against static and dynamic avalanche. Therefore we investigate the effect of different buffer structures and the influence of various bulk parameters. By numerical device simulation the effect of the buffer doping, base doping and base width on the static and dynamic behaviour of FWDs is analysed. We show the promising features of well designed buffers for ruggedness and their coherences to the static reverse characteristics.

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来源期刊

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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