{"title":"基于gst的相变存储器件中的弛豫振荡","authors":"D. C. Jackson, M. Nardone, V. Karpov, I. Karpov","doi":"10.1109/IMW.2009.5090605","DOIUrl":null,"url":null,"abstract":"The purpose of this work is to investigate the material and device properties of GST-based PCM by studying relaxation oscillations [1, 2]. Our experimental results relate oscillation characteristics to applied voltage, load resistance and device thickness.","PeriodicalId":113507,"journal":{"name":"2009 IEEE International Memory Workshop","volume":"8 8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Relaxation Oscillation in GST-Based Phase Change Memory Devices\",\"authors\":\"D. C. Jackson, M. Nardone, V. Karpov, I. Karpov\",\"doi\":\"10.1109/IMW.2009.5090605\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The purpose of this work is to investigate the material and device properties of GST-based PCM by studying relaxation oscillations [1, 2]. Our experimental results relate oscillation characteristics to applied voltage, load resistance and device thickness.\",\"PeriodicalId\":113507,\"journal\":{\"name\":\"2009 IEEE International Memory Workshop\",\"volume\":\"8 8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-05-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Memory Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW.2009.5090605\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Memory Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2009.5090605","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Relaxation Oscillation in GST-Based Phase Change Memory Devices
The purpose of this work is to investigate the material and device properties of GST-based PCM by studying relaxation oscillations [1, 2]. Our experimental results relate oscillation characteristics to applied voltage, load resistance and device thickness.
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