基于杂化纳米介质碳纳米管薄膜晶体管的低压电子学

V. Pecunia, Luis Portilla
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引用次数: 1

摘要

可解决方案处理电子产品已被广泛誉为新兴应用领域(如物联网和用于健康监测的即放即忘设备)的有吸引力的平台。这项研究特别解决了易于制造的解决方案可处理的电子产品的需求,这些电子产品可以在柔性电池或紧凑型能量采集器提供的低电源电压下工作。通过将印刷的半导体单壁碳纳米管网络(SWCNTNs)与混合纳米介质相结合,实现了能够在1 V电压范围内工作的薄膜晶体管(TFTs)。采用的器件堆栈实现了平衡的双极性特性,其关键器件参数具有良好的对称性,载流子迁移率值在10-15 cm2 V−1 s−1范围内。基于其条件良好的双极性特性,这些tft以CMOS方式集成到逆变器门中。这种逆变器可以在1 V的电源电压下工作,具有足够的对称性和35 V/V增益的互补特性。凭借其提供低压电路操作的能力,这种方法构成了解决方案可处理电子器件的有前途的途径,可以解决新兴应用领域的低压要求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low-Voltage Electronics Based on Carbon Nanotube Thin-Film Transistors with Hybrid Nanodielectric
Solution-processable electronics has been widely hailed as an attractive platform for emerging application domains such as the Internet of Things and for place-and-forget devices for health monitoring. This study specifically addresses the need for easy-to-make solution-processable electronics that can function with the low supply voltage available from flexible batteries or compact energy harvesters. By combining printed semiconducting single-walled carbon nanotube networks (SWCNTNs) with a hybrid nanodielectric, thin film transistors (TFTs) are realized that are capable of operating with a supply voltage in the range of 1 V. The adopted device stack enables balanced ambipolar characteristics, with good symmetry in their key device parameters and with carrier mobility values in the range of 10–15 cm2 V−1 s−1. On the basis of their well-conditioned ambipolar characteristics, these TFTs are integrated in CMOS fashion into inverter gates. Such inverters can operate with a supply voltage of 1 V, exhibiting complementary-like characteristics with adequate symmetry and with a gain of 35 V/V. In virtue of its ability to deliver low-voltage circuit operation, this approach constitutes a promising avenue for solution-processable electronics that can address the low-voltage requirements of emerging application domains.
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