{"title":"一种8- 15ghz GaAs单片变频器","authors":"R. Ramachandran, S. Moghe, P. Ho, A. Podell","doi":"10.1109/MCS.1987.1114510","DOIUrl":null,"url":null,"abstract":"An MMIC frequency converter with an RF bandwidth of 8-15 GHz and an IF bandwidth of 1.5 GHz has been designed and built. The MMlC chip has15 dB conversion gain and includes a two-stage RF amplifier, a two-stage LO buffer amplifier, a double-balanced mixer and a three-stage IF amplifier. This high level of integration is realized on a 48 x 96 mil area, resulting in good RF yields. The circuit employs a push-pull configuration to eliminate the need for via-holes (low-inductance grounds) and facilitate a compact layout.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"132 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"An 8-15 GHz GaAs Monolithic Frequency Converter\",\"authors\":\"R. Ramachandran, S. Moghe, P. Ho, A. Podell\",\"doi\":\"10.1109/MCS.1987.1114510\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An MMIC frequency converter with an RF bandwidth of 8-15 GHz and an IF bandwidth of 1.5 GHz has been designed and built. The MMlC chip has15 dB conversion gain and includes a two-stage RF amplifier, a two-stage LO buffer amplifier, a double-balanced mixer and a three-stage IF amplifier. This high level of integration is realized on a 48 x 96 mil area, resulting in good RF yields. The circuit employs a push-pull configuration to eliminate the need for via-holes (low-inductance grounds) and facilitate a compact layout.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"132 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1987.1114510\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1987.1114510","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
摘要
设计并实现了一个射频带宽为8 ~ 15ghz,中频带宽为1.5 GHz的MMIC变频器。MMlC芯片具有15db转换增益,包括一个两级射频放大器,一个两级LO缓冲放大器,一个双平衡混频器和一个三级中频放大器。这种高集成度在48 x 96 mil的面积上实现,从而产生良好的射频产量。该电路采用推挽配置,以消除对过孔(低电感接地)的需要,并便于紧凑的布局。
An MMIC frequency converter with an RF bandwidth of 8-15 GHz and an IF bandwidth of 1.5 GHz has been designed and built. The MMlC chip has15 dB conversion gain and includes a two-stage RF amplifier, a two-stage LO buffer amplifier, a double-balanced mixer and a three-stage IF amplifier. This high level of integration is realized on a 48 x 96 mil area, resulting in good RF yields. The circuit employs a push-pull configuration to eliminate the need for via-holes (low-inductance grounds) and facilitate a compact layout.