Ru-Ta合金阻挡层中N掺杂对Cu互连膜性能和可靠性的影响

2009 IEEE International Interconnect Technology Conference Pub Date : 2009-06-01 DOI:10.1109/IITC.2009.5090356

N. Torazawa, T. Hinomura, K. Mori, Y. Koyama, S. Hirao, E. Kobori, H. Korogi, K. Maekawa, K. Tomita, H. Chibahara, N. Suzumura, K. Asai, H. Miyatake, S. Matsumoto

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引用次数: 1

摘要

在Ru-Ta合金中掺杂N制备了RuTa(N)薄膜，并研究了其作为Cu互连中Cu扩散的阻挡层的作用。在BEOL过程中，RuTa(N)对Cu的阻隔性能较差，这是由于Ru-Ta合金中的N被解吸，而RuTa(N)在热处理过程中发生了再结晶。与RuTa相比，RuTa(N)与Cu的润湿性较差，可靠性较差。另一方面，RuTa具有良好的阻隔性能和优越的可靠性。将RuTa单膜用作Cu互连的阻挡层是可能的。

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Effects of N doping in Ru-Ta alloy barrier on film property and reliability for Cu interconnects

RuTa(N) film has been prepared by doping N in Ru-Ta alloy and investigated its use as a barrier layer against Cu diffusion in Cu interconnects. It was found that RuTa(N) has a poor barrier property against Cu in the BEOL process, since N in Ru-Ta alloy is desorbed and RuTa(N) is recrystallized by heat treatment. It was also shown that RuTa(N) has inferior reliability due to its poor wettability with Cu compared to RuTa. On the other hand, RuTa has both good barrier property and superior reliability performance. It is possible to apply RuTa single film as a barrier layer for Cu interconnects.

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2009 IEEE International Interconnect Technology Conference

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