R.A. Johnson, C.E. Chang, P. de la Houssaye, G. Garcia, I. Lagnado, P. Asbeck
{"title":"高f/sub max/低噪声薄膜蓝宝石上硅mosfet的微波特性","authors":"R.A. Johnson, C.E. Chang, P. de la Houssaye, G. Garcia, I. Lagnado, P. Asbeck","doi":"10.1109/SOI.1995.526439","DOIUrl":null,"url":null,"abstract":"We report the microwave characteristics and modeling of thin-film silicon-on-sapphire n- and p-channel MOS transistors with high f/sub max/, and low F/sub min/. N-channel and p-channel MOSFETs were fabricated with optically defined low resistance T-gates and found to have f/sub max/ values above 60 GHz and 40 GHz, respectively. The minimum noise figure, F/sub min/ was below 1 dB at 2 GHz for both devices. Both the f/sub max/ and F/sub min/ values are the best reported to date for silicon MOSFETs. A small signal model, similar to that used for MESFETs, is used here to model the devices, extract the small signal parameters and correlate the device structure with the measured performance.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Microwave characteristics of high f/sub max/ low noise thin film silicon-on-sapphire MOSFETs\",\"authors\":\"R.A. Johnson, C.E. Chang, P. de la Houssaye, G. Garcia, I. Lagnado, P. Asbeck\",\"doi\":\"10.1109/SOI.1995.526439\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the microwave characteristics and modeling of thin-film silicon-on-sapphire n- and p-channel MOS transistors with high f/sub max/, and low F/sub min/. N-channel and p-channel MOSFETs were fabricated with optically defined low resistance T-gates and found to have f/sub max/ values above 60 GHz and 40 GHz, respectively. The minimum noise figure, F/sub min/ was below 1 dB at 2 GHz for both devices. Both the f/sub max/ and F/sub min/ values are the best reported to date for silicon MOSFETs. A small signal model, similar to that used for MESFETs, is used here to model the devices, extract the small signal parameters and correlate the device structure with the measured performance.\",\"PeriodicalId\":149490,\"journal\":{\"name\":\"1995 IEEE International SOI Conference Proceedings\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1995.526439\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526439","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Microwave characteristics of high f/sub max/ low noise thin film silicon-on-sapphire MOSFETs
We report the microwave characteristics and modeling of thin-film silicon-on-sapphire n- and p-channel MOS transistors with high f/sub max/, and low F/sub min/. N-channel and p-channel MOSFETs were fabricated with optically defined low resistance T-gates and found to have f/sub max/ values above 60 GHz and 40 GHz, respectively. The minimum noise figure, F/sub min/ was below 1 dB at 2 GHz for both devices. Both the f/sub max/ and F/sub min/ values are the best reported to date for silicon MOSFETs. A small signal model, similar to that used for MESFETs, is used here to model the devices, extract the small signal parameters and correlate the device structure with the measured performance.
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