基于亚40nm技术的4F2 DRAM单元阵列低漏电流VPT集成

2006 64th Device Research Conference Pub Date : 2006-06-26 DOI:10.1109/DRC.2006.305083

Jae-Man Yoon, Kang-yoon Lee, Seung-bae Park, Seong-goo Kim, H. Seo, Young-woong Son, Bong-soo Kim, Hyun-Woo Chung, Choong-ho Lee, Wonshik Lee, Dong-chan Kim, Donggun Park, Wonshik Lee, B. Ryu

{"title":"基于亚40nm技术的4F2 DRAM单元阵列低漏电流VPT集成","authors":"Jae-Man Yoon, Kang-yoon Lee, Seung-bae Park, Seong-goo Kim, H. Seo, Young-woong Son, Bong-soo Kim, Hyun-Woo Chung, Choong-ho Lee, Wonshik Lee, Dong-chan Kim, Donggun Park, Wonshik Lee, B. Ryu","doi":"10.1109/DRC.2006.305083","DOIUrl":null,"url":null,"abstract":"for 4F2 DRAM Cell Array with sub 40 nm Technology Jae-Man Yoon, Kangyoon Lee, Seung-Bae Park, Seong-Goo Kim, Hyoung-Won Seo, Young-Woong Son, Bong-Soo Kim, Hyun-Woo Chung, Choong-Ho Lee*, Won-Sok Lee* *, Dong-Chan Kim* * *, Donggun Park*, Wonshik Lee and Byung-Il Ryu ATD Team, Device Research Team*, CAEP*, PD Team***, Semiconductor R&D Division, Samsung Electronics Co., San #24, Nongseo-Dong, Kiheung-Gu, Yongin-City, Kyunggi-Do, 449-711, Korea Tel) 82-31-209-4741, Fax) 82-31-209-3274, E-mail)","PeriodicalId":259981,"journal":{"name":"2006 64th Device Research Conference","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A Novel Low Leakage Current VPT(Vertical Pillar Transistor) Integration for 4F2 DRAM Cell Array with sub 40 nm Technology\",\"authors\":\"Jae-Man Yoon, Kang-yoon Lee, Seung-bae Park, Seong-goo Kim, H. Seo, Young-woong Son, Bong-soo Kim, Hyun-Woo Chung, Choong-ho Lee, Wonshik Lee, Dong-chan Kim, Donggun Park, Wonshik Lee, B. Ryu\",\"doi\":\"10.1109/DRC.2006.305083\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"for 4F2 DRAM Cell Array with sub 40 nm Technology Jae-Man Yoon, Kangyoon Lee, Seung-Bae Park, Seong-Goo Kim, Hyoung-Won Seo, Young-Woong Son, Bong-Soo Kim, Hyun-Woo Chung, Choong-Ho Lee*, Won-Sok Lee* *, Dong-Chan Kim* * *, Donggun Park*, Wonshik Lee and Byung-Il Ryu ATD Team, Device Research Team*, CAEP*, PD Team***, Semiconductor R&D Division, Samsung Electronics Co., San #24, Nongseo-Dong, Kiheung-Gu, Yongin-City, Kyunggi-Do, 449-711, Korea Tel) 82-31-209-4741, Fax) 82-31-209-3274, E-mail)\",\"PeriodicalId\":259981,\"journal\":{\"name\":\"2006 64th Device Research Conference\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 64th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2006.305083\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 64th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2006.305083","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 13

摘要

采用 40 纳米以下技术的 4F2 DRAM 单元阵列 Jae-Man Yoon, Kangyoon Lee, Seung-Bae Park, Seong-Goo Kim, Hyoung-Won Seo, Young-Woong Son, Bong-Soo Kim, Hyun-Woo Chung, Choong-Ho Lee*、Won-Sok Lee* *, Dong-Chan Kim* * *, Donggun Park*, Wonshik Lee 和 Byung-Il Ryu 三星电子公司半导体研发部 ATD 团队、器件研究团队*、CAEP*、PD 团队****。,San #24, Nongseo-Dong, Kiheung-Gu, Yongin-City, Kyunggi-Do, 449-711, Korea Tel) 82-31-209-4741, Fax) 82-31-209-3274, E-mail)

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A Novel Low Leakage Current VPT(Vertical Pillar Transistor) Integration for 4F2 DRAM Cell Array with sub 40 nm Technology

for 4F2 DRAM Cell Array with sub 40 nm Technology Jae-Man Yoon, Kangyoon Lee, Seung-Bae Park, Seong-Goo Kim, Hyoung-Won Seo, Young-Woong Son, Bong-Soo Kim, Hyun-Woo Chung, Choong-Ho Lee*, Won-Sok Lee* *, Dong-Chan Kim* * *, Donggun Park*, Wonshik Lee and Byung-Il Ryu ATD Team, Device Research Team*, CAEP*, PD Team***, Semiconductor R&D Division, Samsung Electronics Co., San #24, Nongseo-Dong, Kiheung-Gu, Yongin-City, Kyunggi-Do, 449-711, Korea Tel) 82-31-209-4741, Fax) 82-31-209-3274, E-mail)

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来源期刊

2006 64th Device Research Conference

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