快速热退火InAs/GaAs量子点红外探测器的应变弛豫

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237293

K. Stewart, M. Buda, J. Wong-Leung, L. Fu, C. Jagadish, A. Stiff-Roberts, P. Bhattacharya

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引用次数: 4

摘要

本文研究了快速热退火(RTA)对30个堆叠的InAs/GaAs分子束外延生长量子点红外探测器(QDIP)器件的影响。温度在700 - 900/spl℃范围内，持续60秒，典型的离子注入引起的相互扩散。利用双晶x射线衍射(DCXRD)、光致发光(PL)、透射电镜(XTEM)和器件电特性监测RTA引起的变化。QDIP器件具有良好的PL信号，退火后信号得到改善。然而，RTA后的器件性能较差，DCXRD和XTEM结果清楚地表明应变松弛正在发生。讨论了应变松弛对材料光学和电学性能的影响。

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Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors

In this paper the effect of rapid thermal annealing (RTA) on a 30 stacked InAs/GaAs, molecular beam epitaxially grown quantum dot infrared detector (QDIP) device is studied. Temperatures in the range of 700 - 900/spl deg/C for 60 s, typical of ion implantation induced interdiffusion, are used. Double crystal X-ray diffraction (DCXRD), photoluminescence (PL), cross sectional transmission electron microscopy (XTEM) and device electrical characteristics were used to monitor changes due to RTA. The QDIP devices had good PL signal which improved upon annealing. However the device performance after RTA was poor and DCXRD and XTEM results clearly indicate that strain relaxation is occurring. The role of strain relaxation on optical and electrical properties has been discussed.

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来源期刊

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

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