基于缺陷累积效率模型的GHz交直流TDDB建模

2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI:10.1109/IRPS48203.2023.10117582

Xinwei Yu, Chu Yan, Yaru Ding, Y. Qu, Yi Zhao

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引用次数: 0

摘要

在这项工作中，系统地研究了SOI mosfet的交流时变介电击穿(TDDB)，并使用各种应力模式进行了大量的实验数据。结果表明，在GHz频率下，击穿时间$(\ mathm {T}_{\text{BD}})$和击穿后硬度均有提高。基于TDDB寿命的频率依赖性，我们提出了一个与脉冲宽度相关的综合缺陷积累效率$(\xi)$模型，有助于预测交流TDDB寿命。此外，通过削弱HCI耦合效应，阐明了on-state TDDB的新失效机制。该研究对动态电路下逻辑器件的寿命估计具有重要意义。

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GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model

In this work, AC time-dependent dielectric breakdown (TDDB) of SOI MOSFETs was systematically investigated with considerable experimental data using various stress patterns. It is confirmed that both the time to breakdown $(\mathrm{T}_{\text{BD}})$ and hardness of post-breakdown could be improved at GHz frequency. Based on frequency dependence of TDDB lifetime, we propose a comprehensive defect accumulation efficiency $(\xi)$ model related to pulse width, helping to predict AC TDDB lifetime. In addition, new failure mechanisms for on-state TDDB are clarified by weakening HCI coupled effect. This study is significant for lifetime estimation of logic devices under dynamic circuit operations.

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2023 IEEE International Reliability Physics Symposium (IRPS)

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