1.2 V内置架构,用于高频在线Iddq/增量Iddq测试

S. Dragic, M. Margala
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引用次数: 18

摘要

提出了一种新颖的低电压Iddq/delta Iddq架构设计,适用于模拟、数字或混合信号内核的内置自检(BIST)实现。在测试模式下,体系结构执行非功能Iddq和增量Iddq测试,从而实现更准确的失败/通过决策。开发了1.2 V高频电流放大单元,作为Iddq/ δ Iddq电流监测器的核心部分。该监视器的灵敏度小于200 nA,增益带宽积为6.8 GHz,低频电流增益为48 dB,输入电流范围线性度高(-15 /spl mu/ a, 15 /spl mu/ a)。实验仿真验证了该方法的功能性和高性能。Iddq故障检测器采用0.13 /spl mu/m CMOS技术,电源为1.2 V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 1.2 V built-in architecture for high frequency on-line Iddq/delta Iddq test
A novel low-voltage design of Iddq/delta Iddq architecture suitable for a Built-In-Self-Test (BIST) implementation with analog, digital or mixed-signal cores is proposed. In testing mode, the architecture performs a non-functional Iddq and delta Iddq test which enables a more accurate fail/pass decision. A 1.2 V high-frequency current amplifying cell is developed as a central part of the Iddq/delta Iddq current monitor. With a sensitivity of less than 200 nA, the monitor achieves a gain-bandwidth product of 6.8 GHz, a low frequency current gain of 48 dB, and a high linearity for input current range (-15 /spl mu/A, 15 /spl mu/A). Its functionality and high performances are verified in experimental simulations. The Iddq fault detector has been implemented in a 0.13 /spl mu/m CMOS technology with 1.2 V power supply.
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