{"title":"1.2 V内置架构,用于高频在线Iddq/增量Iddq测试","authors":"S. Dragic, M. Margala","doi":"10.1109/ISVLSI.2002.1016891","DOIUrl":null,"url":null,"abstract":"A novel low-voltage design of Iddq/delta Iddq architecture suitable for a Built-In-Self-Test (BIST) implementation with analog, digital or mixed-signal cores is proposed. In testing mode, the architecture performs a non-functional Iddq and delta Iddq test which enables a more accurate fail/pass decision. A 1.2 V high-frequency current amplifying cell is developed as a central part of the Iddq/delta Iddq current monitor. With a sensitivity of less than 200 nA, the monitor achieves a gain-bandwidth product of 6.8 GHz, a low frequency current gain of 48 dB, and a high linearity for input current range (-15 /spl mu/A, 15 /spl mu/A). Its functionality and high performances are verified in experimental simulations. The Iddq fault detector has been implemented in a 0.13 /spl mu/m CMOS technology with 1.2 V power supply.","PeriodicalId":177982,"journal":{"name":"Proceedings IEEE Computer Society Annual Symposium on VLSI. New Paradigms for VLSI Systems Design. ISVLSI 2002","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"A 1.2 V built-in architecture for high frequency on-line Iddq/delta Iddq test\",\"authors\":\"S. Dragic, M. Margala\",\"doi\":\"10.1109/ISVLSI.2002.1016891\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel low-voltage design of Iddq/delta Iddq architecture suitable for a Built-In-Self-Test (BIST) implementation with analog, digital or mixed-signal cores is proposed. In testing mode, the architecture performs a non-functional Iddq and delta Iddq test which enables a more accurate fail/pass decision. A 1.2 V high-frequency current amplifying cell is developed as a central part of the Iddq/delta Iddq current monitor. With a sensitivity of less than 200 nA, the monitor achieves a gain-bandwidth product of 6.8 GHz, a low frequency current gain of 48 dB, and a high linearity for input current range (-15 /spl mu/A, 15 /spl mu/A). Its functionality and high performances are verified in experimental simulations. The Iddq fault detector has been implemented in a 0.13 /spl mu/m CMOS technology with 1.2 V power supply.\",\"PeriodicalId\":177982,\"journal\":{\"name\":\"Proceedings IEEE Computer Society Annual Symposium on VLSI. New Paradigms for VLSI Systems Design. ISVLSI 2002\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings IEEE Computer Society Annual Symposium on VLSI. New Paradigms for VLSI Systems Design. ISVLSI 2002\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISVLSI.2002.1016891\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE Computer Society Annual Symposium on VLSI. New Paradigms for VLSI Systems Design. ISVLSI 2002","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISVLSI.2002.1016891","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1.2 V built-in architecture for high frequency on-line Iddq/delta Iddq test
A novel low-voltage design of Iddq/delta Iddq architecture suitable for a Built-In-Self-Test (BIST) implementation with analog, digital or mixed-signal cores is proposed. In testing mode, the architecture performs a non-functional Iddq and delta Iddq test which enables a more accurate fail/pass decision. A 1.2 V high-frequency current amplifying cell is developed as a central part of the Iddq/delta Iddq current monitor. With a sensitivity of less than 200 nA, the monitor achieves a gain-bandwidth product of 6.8 GHz, a low frequency current gain of 48 dB, and a high linearity for input current range (-15 /spl mu/A, 15 /spl mu/A). Its functionality and high performances are verified in experimental simulations. The Iddq fault detector has been implemented in a 0.13 /spl mu/m CMOS technology with 1.2 V power supply.