用于电源电压低于2v的eeprom的片上高压发生器电路

Digest of Technical Papers., Symposium on VLSI Circuits. Pub Date : 1995-06-08 DOI:10.1109/VLSIC.1995.520692

K. Sawada, Y. Sugawara, S. Masui

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引用次数: 71

摘要

我们提出了一种用于低压eeprom的片上高压发生器电路，该电路由自引导时钟发生器驱动的pmosfet电荷泵电路组成。单位级的电压增益不受阈值电压降的影响。该器件采用1.2 /spl mu/m CMOS技术，工作电压低至1v。

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An on-chip high-voltage generator circuit for EEPROMs with a power supply voltage below 2 V

We propose an on-chip high-voltage generator circuit for low-voltage EEPROMs composed of a pMOSFET-based charge pump circuit driven by bootstrapped clock generators. The voltage gain per unit stage does not suffer from the threshold voltage drop. The device implemented in a 1.2 /spl mu/m CMOS technology operates as low as 1 V.

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Digest of Technical Papers., Symposium on VLSI Circuits.

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