NBT应力p沟道功率vdmosfet中ΔVT的建模

N. Mitrović, D. Danković, Z. Prijić, N. Stojadinovic
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引用次数: 4

摘要

研究了商用IRF9520 p通道功率vdmosfet的负偏置温度不稳定性,并设计了该效应的解析模型。提出了一个模型框架,该框架与早期获得的实验数据趋于一致。由于在相同温度、相同应力电压量级下,脉冲电压应力引起的位移比静态应力引起的位移要小,因此静态和脉冲应力应考虑不同的模型。静态应力与脉冲应力之间的差异取决于应力占空比和频率,并且随着占空比的减小和频率的增加,差异变得更加显著。因此,所描述的模型不仅适用于特定的应力信号,而且能够适应不同类型的应力信号。在实验结果的基础上,建立了脉冲负偏置温度应力诱发阈值电压漂移的模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modelling of ΔVT in NBT Stressed P-Channel Power VDMOSFETs
Negative bias temperature instabilities in commercial IRF9520 p-channel power VDMOSFETs were studied in order to design an analytical model for this effect. A modelling framework is proposed, which tends to be in line with earlier obtained experimental data. Since the pulsed voltage stressing caused generally lower shifts as compared to static stressing performed at the same temperature with equal stress voltage magnitude, different kind of models are considered for static and pulsed stressing. Differences between static and pulsed NBT stress depend on both stress duty cycle and frequency, and the differences become more significant as the duty cycle decreases and frequency increases. Because of that, described model intent to apply to specific stress signal, but also to be adaptable to different types of stress signal. Modelling of threshold voltage shifts induced by pulsed negative bias temperature stress has been done on the bases of experimental results.
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