2- 8ghz GaAs MMIC反馈放大器的模块化设计方法

J. Moniz, A. Barlas, R. Gold
{"title":"2- 8ghz GaAs MMIC反馈放大器的模块化设计方法","authors":"J. Moniz, A. Barlas, R. Gold","doi":"10.1109/EUMA.1986.334264","DOIUrl":null,"url":null,"abstract":"A two-stage GaAs MMIC feedback amplifier has been developed with nominal 10 dB gain, 2:1 VSWR, and 6 dB noise figure over the 2-8 GHz band. A modular design approach enabled RF wafer probing of the entire 1.25 × 1.50 mm chip, its bias, matching, and feedback networks, as well as the individual active and passive elements of these networks. The analysis and interpretation of these results, along with their implication for MMIC design, will be discussed.","PeriodicalId":227595,"journal":{"name":"1986 16th European Microwave Conference","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modular Design Approach for a 2-8 GHz GaAs MMIC Feedback Amplifier\",\"authors\":\"J. Moniz, A. Barlas, R. Gold\",\"doi\":\"10.1109/EUMA.1986.334264\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A two-stage GaAs MMIC feedback amplifier has been developed with nominal 10 dB gain, 2:1 VSWR, and 6 dB noise figure over the 2-8 GHz band. A modular design approach enabled RF wafer probing of the entire 1.25 × 1.50 mm chip, its bias, matching, and feedback networks, as well as the individual active and passive elements of these networks. The analysis and interpretation of these results, along with their implication for MMIC design, will be discussed.\",\"PeriodicalId\":227595,\"journal\":{\"name\":\"1986 16th European Microwave Conference\",\"volume\":\"80 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1986 16th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1986.334264\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 16th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1986.334264","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

开发了一种两级GaAs MMIC反馈放大器,其标称增益为10db, VSWR为2:1,噪声系数为6db,覆盖2- 8ghz频段。模块化设计方法使射频晶圆能够探测整个1.25 × 1.50 mm芯片,其偏置,匹配和反馈网络,以及这些网络的单个有源和无源元件。将讨论这些结果的分析和解释,以及它们对MMIC设计的含义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modular Design Approach for a 2-8 GHz GaAs MMIC Feedback Amplifier
A two-stage GaAs MMIC feedback amplifier has been developed with nominal 10 dB gain, 2:1 VSWR, and 6 dB noise figure over the 2-8 GHz band. A modular design approach enabled RF wafer probing of the entire 1.25 × 1.50 mm chip, its bias, matching, and feedback networks, as well as the individual active and passive elements of these networks. The analysis and interpretation of these results, along with their implication for MMIC design, will be discussed.
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