{"title":"2- 8ghz GaAs MMIC反馈放大器的模块化设计方法","authors":"J. Moniz, A. Barlas, R. Gold","doi":"10.1109/EUMA.1986.334264","DOIUrl":null,"url":null,"abstract":"A two-stage GaAs MMIC feedback amplifier has been developed with nominal 10 dB gain, 2:1 VSWR, and 6 dB noise figure over the 2-8 GHz band. A modular design approach enabled RF wafer probing of the entire 1.25 × 1.50 mm chip, its bias, matching, and feedback networks, as well as the individual active and passive elements of these networks. The analysis and interpretation of these results, along with their implication for MMIC design, will be discussed.","PeriodicalId":227595,"journal":{"name":"1986 16th European Microwave Conference","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modular Design Approach for a 2-8 GHz GaAs MMIC Feedback Amplifier\",\"authors\":\"J. Moniz, A. Barlas, R. Gold\",\"doi\":\"10.1109/EUMA.1986.334264\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A two-stage GaAs MMIC feedback amplifier has been developed with nominal 10 dB gain, 2:1 VSWR, and 6 dB noise figure over the 2-8 GHz band. A modular design approach enabled RF wafer probing of the entire 1.25 × 1.50 mm chip, its bias, matching, and feedback networks, as well as the individual active and passive elements of these networks. The analysis and interpretation of these results, along with their implication for MMIC design, will be discussed.\",\"PeriodicalId\":227595,\"journal\":{\"name\":\"1986 16th European Microwave Conference\",\"volume\":\"80 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1986 16th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1986.334264\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 16th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1986.334264","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modular Design Approach for a 2-8 GHz GaAs MMIC Feedback Amplifier
A two-stage GaAs MMIC feedback amplifier has been developed with nominal 10 dB gain, 2:1 VSWR, and 6 dB noise figure over the 2-8 GHz band. A modular design approach enabled RF wafer probing of the entire 1.25 × 1.50 mm chip, its bias, matching, and feedback networks, as well as the individual active and passive elements of these networks. The analysis and interpretation of these results, along with their implication for MMIC design, will be discussed.