在相变存储器阵列中设置/重置统计数据和动力学

2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI:10.1109/ESSDERC.2014.6948803

M. Rizzi, N. Ciocchini, D. Ielmini, A. Ghetti, P. Fantini

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引用次数: 0

摘要

下一代PCM阵列的发展需要在统计水平上更好地理解设置/复位过程。本文介绍了45 nm阵列的实验编程特性，并分析了设置/复位程序和读取电流的统计分布。结果表明:(1)熔体电流和结晶动力学都依赖于复位电压;(2)与低温(保留)相比，高温(固定)状态下的结晶扩散减少。

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Set/reset statistics and kinetics in phase change memory arrays

The development of next-generation PCM arrays requires a better understanding of set/reset processes at statistical level. This work presents experimental programming characteristics on 45 nm arrays and analyzes the statistical distribution of set/reset program and read currents. Results show (i) a reset-voltage dependence for both the melt current and the crystallization kinetics and (ii) a reduced crystallization spread in the high-temperature (set) regime, compared to the low-temperature (retention) one.

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2014 44th European Solid State Device Research Conference (ESSDERC)

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