基于ECC和BISR电路的SRAM自检测修复设计与验证

Yanqing Zhang, Yinghun Piao, Mingxue Huo, Tianqi Wang, Guoliang Ma, Chaoming Liu, Jianning Ma, Kairui Guo, Chunhua Qi
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引用次数: 2

摘要

在空间辐射环境下,航天器中的芯片容易受到辐射效应的影响,从而导致器件的误差。因此,错误的检测和修复就显得尤为重要。针对空间辐射环境下单事件效应导致的存储单元软硬错误,提出了一种基于ECC电路和BISR电路的存储体系结构,能够在线检测错误,区分软硬错误并进行修复,从而减少错误的积累。存储结构采用修复电路和冗余存储器分别对软错误和硬错误进行修复。仿真结果表明,在正常读写模式下,该存储结构不仅能修复软错误,还能修复硬错误,并能检测出不可修复的硬错误。说明该方法是有效的。当存储器尺寸为39 x 64K时,ECC和BIRA电路的面积约占整个存储器芯片的13.95%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and Verification of SRAM Self-Detection Repair Based on ECC and BISR Circuit
In the space radiation environment, the chip in the spacecraft is susceptible to radiation effects, which leading to the errors of the device. Therefore, the detection and repair of the errors is particularly important. Aiming at the soft and hard errors of memory cell caused by single event effect in space radiation environment, a memory architecture based on ECC circuit and BISR circuit is proposed to detect errors online, distinguish between soft and hard errors and repair them, so as to reduce the accumulation of errors. And the memory structure uses repair circuit and redundant memory to repair soft errors and hard errors respectively. The simulation results show that in normal read-write mode, the proposed memory structure not only can repair soft errors, but also can repair hard errors, and can detect unrepairable hard errors. It means that the proposed method is effective. when the memory size is 39 x 64K, the area of the ECC and the BIRA circuit is about 13.95% of the entire memory chip.
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